Gate-Emitter Leakage Current :100 nA
Product Category :IGBT Transistors
Mounting Style :Through Hole
Continuous Collector Current at 25 C :80 A
Pd - Power Dissipation :395 W
Collector- Emitter Voltage VCEO Max :650 V
Package / Case :TO-247-3
Maximum Operating Temperature :+ 175 C
Maximum Gate Emitter Voltage :4.8 V
Configuration :Single
Collector-Emitter Saturation Voltage :1.65 V
Manufacturer :Infineon Technologies
Description :IGBT Transistors Trenchstop 5 IGBT
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