RN1132MFV, L3F

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Category :Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max) :100 mA

Product Status :Active

Transistor Type :NPN - Pre-Biased

Mounting Type :Surface Mount

Package :Tape & Reel (TR) Cut Tape (CT) Digi-Reel®

Series :-

Vce Saturation (Max) @ Ib, Ic :300mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :50 V

Supplier Device Package :VESM

Resistor - Base (R1) :200 kOhms

Mfr :Toshiba Semiconductor and Storage

Current - Collector Cutoff (Max) :100nA (ICBO)

Power - Max :150 mW

Package / Case :SOT-723

DC Current Gain (hFE) (Min) @ Ic, Vce :120 @ 1mA, 5V

Base Product Number :RN1132

Description :TRANS PREBIAS NPN 50V 0.1A VESM

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DRV10863DSNR

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