Tipo del MOS del canal N del silicio del transistor de efecto de campo de TOSHIBA (π-MOSVI)
2SK3569
Usos del recorte regulador
• Dren-fuente baja EN resistencia: RDS (ENCENDIDO) = 0.54Ω (tipo.)
• Alta entrada de transferencia delantera: |Yfs| = 8.5S (tipo.)
• Corriente baja de la salida: IDSS = μA 100 (VDS = 600 V)
• Aumento-modo: Vth = 2.0~4.0 V (VDS = 10 V, identificaciones = 1 mA)
Características eléctricas (TA = 25°C)
| Características |
Símbolo |
Condición de prueba |
Minuto |
Tipo |
Máximo |
Unidad |
| Corriente de salida de puerta |
IGss |
VGS = ±25 V, VDS = 0 V |
- |
- |
±10 |
UA |
| voltaje de avería de la Puerta-fuente |
VGss |
IG = ±10 µA, VDS = 0 V |
±30 |
- |
- |
V |
| Drene la corriente del atajo |
IDss |
VDS = 600 V, VGS = 0 V |
- |
- |
100 |
UA |
| voltaje de avería de la Dren-fuente |
VDss |
Identificación = 10 mA, VGS = 0 V |
600 |
- |
- |
V |
| Voltaje del umbral de la puerta |
Vth |
VDS = 10 V, identificación = 1 mA |
2,0 |
- |
4,0 |
V |
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