RN1109MFV,L3F

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Category :Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors

Current - Collector (Ic) (Max) :100 mA

Product Status :Active

Transistor Type :NPN - Pre-Biased

Mounting Type :Surface Mount

Package :Tape & Reel (TR)

Series :-

Vce Saturation (Max) @ Ib, Ic :300mV @ 500µA, 5mA

Voltage - Collector Emitter Breakdown (Max) :50 V

Supplier Device Package :VESM

Resistor - Base (R1) :47 kOhms

Mfr :Toshiba Semiconductor and Storage

Resistor - Emitter Base (R2) :22 kOhms

Current - Collector Cutoff (Max) :500nA

Power - Max :150 mW

Package / Case :SOT-723

DC Current Gain (hFE) (Min) @ Ic, Vce :70 @ 10mA, 5V

Base Product Number :RN1109

Description :TRANS PREBIAS NPN 50V 0.1A VESM

Stock :In Stock

Shipping Method :LCL, AIR, FCL, Express

Payment Terms :L/C, D/A, D/P, T/T, Western Union, MoneyGram

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Transistor bipolar Pre-en polarización negativa (BJT) NPN - 50 V Pre-en polarización negativa 100 mA soporte superficial VESM de 150 mW

Almacenadores intermediarios, conductores, receptores, transmisores-receptores